Development of DKL7640: Achieving More Efficient GaN Wafer Production using the KABRA® Process

DISCO Corporation, a semiconductor manufacturing equipment manufacturer (Head Office: Ota-ku, Tokyo; President: Kazuma Sekiya), has developed DKL7640, a fully automatic KABRA laser saw that enables efficient GaN (gallium nitride) wafer production using the KABRA® process, an ingot slicing method using laser processing. This equipment will be exhibited at SEMICON Japan 2024 (December 11-13, Tokyo Big Sight).

Developmental Background

GaN is gaining attention as a next-generation power semiconductor material for its excellent switching performance and low power loss. However, it is costly as crystal growth takes time and the resulting ingot is thin and small in diameter. In addition, when slicing a GaN ingot with a wire saw, it not only takes time, but also leads to material loss when removing the undulation that occurs during wire saw processing or the lapping process performed on the cut surface.
Due to these factors, wafer costs are high, hindering the spread of GaN power devices. Thus, a more efficient wafer manufacturing method was necessary.
DKL7640 uses a KABRA process that is optimized for GaN wafers and can achieve high productivity wafer production and respond to the mass production needs of next-generation semiconductors.

DKL7640

Features

  • Increased no. of wafers obtained from an ingot
  • It is possible to suppress the undulation that occurs during ingot slicing by controlling the laser focal point. Thus, the lapping process used to planarize wafers is no longer necessary, reducing material loss by 40%.

  • Improved throughput due to significant processing time reduction
    Comparison of the Conventional Process and KABRA Process

    *1 : When producing wafers with a specified thickness of 400 µm (SEMI standard) from a 2 inch, 5 mm thick GaN ingot

    *2 : When the lapping process is performed after slicing with a multi diamond wire saw. All values are general values obtained from users.

    *3 : No. of wafers produced assuming that four ingots are processed in parallel.

    *4 : No. of wafers produced calculated from the time taken to perform wire saw slicing and the lapping process for four ingots simultaneously


  • Supports future large diameter ingots
  • Supports large GaN ingots with a max. diameter of Φ8 inches and thickness of 10 mm or less

  • Lower operator workload
  • Automatically detects the size, orientation, and position of the ingot using a camera and sensor built into the equipment

Future Schedule

To be exhibited at SEMICON Japan 2024 December 11 to 13, 2024 at Tokyo Big Sight
Test cuts Accepting requests
Sales release From late 2025

About DISCO
DISCO is a semiconductor equipment manufacturer that provides precision processing equipment, including dicing saws and grinders, and precision processing tools (blades and wheels) used for manufacturing semiconductors and electronic components. In addition to these products, as a result of pursuing optimal processing results for customers through the provision of the technology used with the equipment and tools, DISCO products and processing technologies have been widely adopted by device manufacturers and semiconductor subcontractors both domestically and internationally. For details, please visit the DISCO website at www.disco.co.jp.

Contact

Please feel free to contact us with any questions or inquiries.


Recommendation