Grinding

Ultra-Thin Grinding

In recent years, the demand for ultra-thin die for use in mobile phones, stacked packages, and a myriad of other applications has been increasing. DISCO delivers complete ultra-thin grinding solutions that comprise four key elements: machine, grinding wheel, protective tape, and processing conditions.

TAIKO^® Process

The TAIKO process is the name of a wafer back grinding process. This method is different to conventional back grinding. When grinding the wafer, the TAIKO process leaves an edge (approximately 3 mm) on the outer most circumference of the wafer and thin grinds only the inner circumference. By using this method, it lowers the risk of thin wafer handling and lowers warpage.

Grinding of SiC Device Wafers

SiC (silicon carbide) is a semiconductor material with high voltage resistance and low power loss, and SiC wafers are used in power devices. SiC power devices generally have a vertical device structure, and thinning the wafer lowers the substrate resistance, leading to improved energy conversion efficiency. However, SiC is well known as a difficult-to-process material that has a high rigidity compared to Si, making dedicated applications and wheels necessary for the thinning process.