The DDS2010 offers an integrated expansion and breaking solution to achieve high-yield and high-throughput die singulation of wafers processed using Stealth Dicing™ process (SD)※.
*Stealth Dicing™ is a processing method that focuses a laser within the workpiece to form a modified layer, after which a tape expander is used to separate the die. This processing method is effective in achieving street reduction for small die or rectangular-shaped die such as RFID ICs and line sensors.
Scan breaking can be performed at a set speed for the stable separation of any die size. This is faster than 3-point breaking which requires the breaking bar to stop at each line.
Wafer | Φ8 inch x 0.1 mm thick |
Die size | 0.5 × 0.5 mm |
Note: These are DISCO measurements and sample process times.
These results cannot be guaranteed for all conditions
Specification | Unit | |
---|---|---|
Max. workpiece size | - | Φ8 inch |
Dice size | mm | 0.1~0.5 (narrow side) Max. 20 mm (long side) *long die only |
Wafer mounting accuracy X/Y direction (frame mount) | mm | ±2.5 |
Wafer mounting accuracy θ direction (frame mount) | ° | ±3° |
Equipment dimensions (W×D×H) | mm | 718 × 897 × 1,608 (including status indicator) |
Equipment weight | kg | Approx.450 |
*Product appearance, features, specifications, and other details may change due to technical
modifications.
*Please read the standard specification sheet thoroughly before use.
Please feel free to contact us with any questions or inquiries.