With the reduction in height and size of IC packages, there is increased demand for thinner built-in die in silicon devices. Therefore, the stress relief process is carried out to improve die strength after wafer backgrinding. Furthermore, a polishing process is also required after backgrinding to improve performance for devices such as high luminance sapphire (Al2O3) substrate for LEDs, lithium tantalate (LiTaO3) / lithium niobate (LiNbO3) substrate for high-speed communication device SAW filters, and silicon carbide (SiC) substrate for power devices.
Typical CMP equipment places the wafer above and the polishing pad below. In contrast, DISCO equipment possess a feed axis and places the polishing pad above and the wafer below. This structure is called “in-feed polishing” and is used for both dry polishing and wet polishing (polishing method that utilizes typical CMP chemicals). DISCO’s wet polishing, introduced here, realizes scratch reduction, mirror surface finish, and improvements to cleanliness. Furthermore, depending on the material, an Epi Ready* finish can be achieved.
*Epi Ready: surfaces and materials that enable epitaxial growth.
Our product line-up provides highly extensible capabilities that can be used to match our customer’s operating environment and can also be used for a wide range of applications.
A free-of-charge test cut is performed at an application lab to confirm whether achieving the customer's needs is possible.
Dicing and Grinding Service
It is effective in sample and prototype manufacturing during development or low-volume production. Designated engineers will provide support based on the desired leadtime and at reasonable cost.